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Here Power & Beyond

RFIC/MMIC GaAs/GaN Power Amplifier Designer

Here Power & Beyond, Atlanta, Georgia, United States, 30349


Falcomm was founded with a mission to bring semiconductor innovation to the real world. Today, Falcomm is actively developing new semiconductor technologies for customers to provide the most energy efficient power amplifier products in the world. Falcomm is seeking a highly motivated RF/mm-Wave power amplifier designer skilled in designing in GaN processes on industry standard EDA tools. An ideal candidate is able to learn quickly, is highly detail-oriented, takes pride in the quality of their work, and wants to make a real impact in creating ultra energy efficient power amplifier technologies for the wireless communication market.RFIC/MMIC GaAs/GaN Power Amplifier DesignerRESPONSIBILITIES:Lead the research and development of a new ultra-efficient MMIC power amplifier product line in state-of-the-art GaAs, and GaN processesDerive specifications for the MMIC subsystems and circuitsDesign the transistors, MMICs, passive devices and other on-chip matching networks, using state-of-the-art simulation tools.Model package and external parasitic componentsEvaluate and characterize prototypes of the designAssist in the development of automated test lab equipment for lab measurementsWork with manufacturing engineers on production testing and qualification of the components and systemsBASIC QUALIFICATIONS:Must have proven mmWave power amplifier design experienceMust be an efficient user of Cadence (Virtuoso)/Agilent ADS / Mentor tools / HFSSGood knowledge of IC design, simulation, layout, and system level designMaster’s degree in electrical engineering or computer engineeringPassionate about RF/microwave integrated circuitsExcited about innovationDesire to learnPREFERRED SKILLS AND EXPERIENCE:PhD/Master/bachelor’s in electrical engineering with an emphasis in RF/microwave integrated circuits designExperience using simulation tools such as Keysight PathWave Designs Suite (ADS, SystemVue, GoldenGate, Momentum), Spectre, HFSSStrong circuit design skills, and experience performing analysis and simulation of both linear and non-linear circuits for power amplifiers and other related RF circuit blocksKnowledge of digital communication systems, spread spectrum, single and multi-carrier techniques and modulation types such as QPSK, APSK and QAMKnowledge of RF transceiver architecturesRF/microwave design in the GSM band, Ku-band, K-band and Ka-band frequency rangeFamiliarity with radio related test equipment such as spectrum analyzers, vector signal analyzers, vector signal generator, network analyzersExperience characterizing radio performance in microwave frequenciesREQUIREMENTS:Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status.Applicants wishing to view a copy of Falcomm’s Affirmative Action Plan for veterans and individuals with disabilities, or applicants requiring reasonable accommodation to the application/interview process should notify Falcomm.To conform to U.S. Government export regulations, including the International Traffic in Arms Regulations (ITAR) you must be a U.S. citizen, lawful permanent resident of the U.S., protected individual as defined by 8 U.S.C. 1324b(a)(3), or eligible to obtain the required authorizations from the U.S. Department of State.LOCATION:On-site required - Atlanta, GA.BENEFITS:

Increase your chances of reaching the interview stage by reading the complete job description and applying promptly.Stock option planMedical, dental, and visionPaid time offFamily leave

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